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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY FY7BCH-02B HIGH-SPEED SWITCHING USE Nch POWER MOSFET FY7BCH-02B OUTLINE DRAWING Dimensions in mm 6.4 4.4 3.0 1.1 0.275 0.65 DRAIN SOURCE GATE q q q q 2.5V DRIVE VDSS .................................................................................. 20V rDS (ON) (MAX) .............................................................. 21m ID ............................................................................................ 7A TSSOP8 APPLICATION Motor control, Lamp control, Solenoid control, DC-DC converte, etc MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value L = 10H VGS = 0V VDS = 0V Conditions Ratings 20 10 7 49 7 1.5 6.0 1.6 -55~+150 -55~+150 0.035 Unit V V A A A A A W C C g Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY7BCH-02B HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state voltage ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V Test conditions Limits Min. 20 -- -- 0.5 -- -- -- -- -- -- -- -- VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50 -- -- -- -- -- -- Typ. -- -- -- 0.8 17 21 0.119 20 1350 400 300 30 80 150 160 0.75 -- 50 Max. -- 0.1 0.1 1.3 21 30 0.147 -- -- -- -- -- -- -- -- 1.10 78.1 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns ID = 7A, VGS = 4V Drain-source on-state resistance ID = 3.5A, VGS = 2.5V Drain-source on-state voltage ID = 7A, VGS = 4V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz IS = 1.5A, VGS = 0V Channel to ambiet IS = 1.5A, dis/dt = -50A/s Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY7BCH-02B HIGH-SPEED SWITCHING USE Nch POWER MOSFET PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 MAXIMUM SAFE OPERATING AREA 7 5 tw = 10s POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) 1.6 3 2 100s 1ms 101 7 5 3 2 1.2 0.8 100 7 5 3 2 TC = 25C Single Pulse 10ms 0.4 100ms 0 10-1 0 50 100 150 200 7 2 3 5 7 100 2 3 5 7 101 DC 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 4V PD = 1.6W 3V 2.5V OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 4V,3V,2.5V 2V Tc = 25C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 40 16 30 2V Tc = 25C Pulse Test 12 1.5V 20 8 10 1.5V 4 PD = 1.6W 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 40 Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) VGS = 2.5V DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) 1.6 32 1.2 24 4V 0.8 ID = 14A 7A 3A 16 Tc = 25C Pulse Test 0.4 8 0 0 1.0 2.0 3.0 4.0 5.0 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) Aug. 1999 GATE-SOURCE VOLTAGE VGS (V) MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY7BCH-02B HIGH-SPEED SWITCHING USE Nch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 TC = 25C,75C,125C TRANSFER CHARACTERISTICS (TYPICAL) 50 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 40 3 2 30 Tc = 25C VDS = 10V Pulse Test 101 7 5 3 2 VDS =10V Pulse Test 20 10 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) tf td(off) tr td(on) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 Tch = 25C VGS = 0V f = 1MHZ Coss Crss 102 7 5 3 2 101 7 5 3 2 Tch = 25C VGS = 4V VDD = 10V RGEN = RGS = 50 102 7 5 3 2 10-1 23 5 7 100 23 5 7 101 2 100 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 5.0 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) 4.0 VDS = 7V 10V 16 TC = 25C 75C 3.0 15V 12 125C 2.0 8 VGS = 0V TC = 25C Pulse Test 1.0 ID =7A Tch = 25C 4 0 0 8 16 24 32 40 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY7BCH-02B HIGH-SPEED SWITCHING USE Nch POWER MOSFET DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 2.0 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 VDS = 10V ID = 1mA 1.2 100 7 5 3 2 VGS = 4V ID = 7A Pulse Test 0.8 0.4 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 7 5 3 2 PDM tw 1.0 VGS = 0V ID = 1mA 0.8 100 7 5 3 2 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Aug. 1999 |
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